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| CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications. SOD-80 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL VRRM VRWM IO IF if IFSM IFSM PD TJ,Tstg JA 150 125 150 225 600 500 4.0 500 -65 to +200 350 UNITS V V mA mA mA mA A mW C C/W Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Forward Steady-State Current Recurrent Peak Forward Current Peak Forward Surge Current (1.0s pulse) Peak Forward Surge Current (1.0s pulse) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX BVR IR IR IR IR VF VF VF VF VF VF CT trr IR=100A VR=125V VR=125V, TA=125C VR=125V, TA=150C VR=30V, TA=125C IF=1.0mA IF=5.0mA IF=10mA IF=50mA IF=100mA IF=200mA VR=0, f=1.0MHz VR=3.5V, If=10mA, RL=1.0k 150 1.0 500 3.0 300 0.69 0.77 0.80 0.88 0.92 1.00 8.0 3.0 UNITS V nA nA A nA V V V V V V pF s R1 ( 25-September 2001) 0.54 0.62 0.65 0.75 0.79 0.83 Central TM CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE Semiconductor Corp. SOD-80 CASE - MECHANICAL OUTLINE R1 ( 25-September 2001) |
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